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Malanos High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications. A 2 Excellent DC current gain characteristics. Th tchnical information spcifid hrin is intndd only to show th typical functions of and xampls of application circuits for th Products.
It is intended for telecommunications. NPN general-purpose transistors in small plastic packages. To make this website work, we log user data and share it with processors. Mervin May 2 years ago Views: ROHM shall hav no rsponsibility whatsovr for any disput arising out of th us of such tchnical information.
ROHM shall hav no rsponsibility for any damags or losss rsulting non-complianc with any applicabl laws or rgulations. Low voltage PNP power transistor. IC [A] 2SD 10ms 1 0. Bfor you us our Products, plas contact our sals rprsntativ and vrify th latst spcifications: Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures.
Filter bandwidth More information. I C  Fig. Please v isit our website for pricing and availability at www. Designed for use in general purpose power amplifier and switching applications.
These are Pb Free Devices. Features Low Saturation Voltage Excellent. The AT- is housed in. Product overview Type number More information. Exampls of application circuits, circuit constants and any othr information containd hrin ar providd only to illustrat th standard usag and oprations datasheft th Products. Low voltage NPN power Darlington transistor. ROHM dos not grant you, xplicitly or implicitly, any licns to us or xrcis intllctual proprty or othr rights hld by ROHM or any othr partis.
NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with. Emitter Current 10 0. The peripheral conditions must vatasheet taken into account when designing circuits for mass production. General description NPN general-purpose transistors. Th Products ar intndd for us in gnral lctronic quipmnt i. Emitter-Base Voltage Collector output capacitance vs. This device is specifically designed.
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